DMG4N65CTI

Diodes Incorporated

DMG4N65CTI

Analog & Power

MOSFET N-CH 650V 4A ITO220AB

ObsoleteTO-220-3 Full Pack, Isolated TabAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs3Ohm @ 2A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs13.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds900 pF @ 25 V
ManufacturerDiodes Incorporated
Mounting TypeThrough Hole
Product StatusObsolete
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id5V @ 250µA

Electrical

Drain-to-Source Voltage650 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C4A (Tc)
Max Power Dissipation8.35W (Ta)

Mechanical

PackageTube
Package / CaseTO-220-3 Full Pack, Isolated Tab
Supplier Device PackageITO-220AB

Environmental

Operating Temperature-55°C ~ 150°C (TJ)