DMG1016V-7

Diodes Incorporated

DMG1016V-7

Datasheet

Analog & Power

MOSFET N/P-CH 20V 0.87A SOT563

ActiveSOT-563, SOT-666Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs400mOhm @ 600mA, 4.5V
Base Product NumberDMG1016
ConfigurationN and P-Channel
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs0.74nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds60.67pF @ 16V
ManufacturerDiodes Incorporated
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1V @ 250µA

Electrical

Drain-to-Source Voltage20V
Current - Continuous Drain (Id) @ 25°C870mA, 640mA
Power - Max530mW

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / CaseSOT-563, SOT-666
Supplier Device PackageSOT-563

Environmental

Operating Temperature-55°C ~ 150°C (TJ)