DMG1012UWQ-7

Diodes Incorporated

DMG1012UWQ-7

Datasheet

Analog & Power

MOSFET BVDSS: 8V~24V SOT323 T&R

Active6-TSSOP, SC-88, SOT-363Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs450mOhm @ 600mA, 4.5V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds43 pF @ 16 V
ManufacturerDiodes Incorporated
Mounting TypeSurface Mount
Product StatusActive
SeriesAutomotive, AEC-Q101
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±6V
Vgs(th) (Max) @ Id1V @ 250µA

Electrical

Drain-to-Source Voltage20 V
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C950mA (Ta)
Max Power Dissipation460mW

Mechanical

PackageTape & Reel (TR)
Package / Case6-TSSOP, SC-88, SOT-363
Supplier Device PackageSOT-363

Environmental

Operating Temperature-55°C~150°C(TJ)