DMC67D8UFDBQ-13

Diodes Incorporated

DMC67D8UFDBQ-13

Datasheet

Analog & Power

MOSFET N/P-CH 60V 0.39A 6UDFN

Active6-UDFN Exposed PadAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs4Ohm @ 500mA, 10V, 72mOhm @ 3.5A, 4.5V
ConfigurationN and P-Channel Complementary
Gate Charge (Qg) (Max) @ Vgs0.4pC @ 4.5V, 7.3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds41pF @ 25V, 443pF @ 16V
ManufacturerDiodes Incorporated
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.5V @ 250µA, 1.25V @ 250µA

Electrical

Drain-to-Source Voltage60V, 20V
Current - Continuous Drain (Id) @ 25°C390mA (Ta), 2.9A (Ta)
Power - Max580mW (Ta)

Mechanical

PackageTape & Reel (TR)
Package / Case6-UDFN Exposed Pad
Supplier Device PackageU-DFN2020-6 (Type B)

Environmental

GradeAutomotive
Operating Temperature-55°C ~ 150°C (TJ)
QualificationAEC-Q101