DMC3032LFDB-13

Diodes Incorporated

DMC3032LFDB-13

Datasheet

Analog & Power

MOSFET N/P-CH 30V 5.3A 6UDFN

Active6-UDFN Exposed PadAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs30mOhm @ 5.8A, 10V, 70mOhm @ 3.8A, 10V
Base Product NumberDMC3032
ConfigurationN and P-Channel Complementary
FET FeatureStandard
Gate Charge (Qg) (Max) @ Vgs10.6nC @ 10V, 7.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds500pF @ 15V, 336pF @ 25V
ManufacturerDiodes Incorporated
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2V @ 250µA, 2.1V @ 250µA

Electrical

Drain-to-Source Voltage30V
Current - Continuous Drain (Id) @ 25°C5.3A (Ta), 3.4A (Ta)
Power - Max800mW

Mechanical

PackageBulk
Package / Case6-UDFN Exposed Pad
Supplier Device PackageU-DFN2020-6 (Type B)

Environmental

Operating Temperature-55°C ~ 150°C (TJ)