BS107PSTZ

Diodes Incorporated

BS107PSTZ

Datasheet

Analog & Power

MOSFET N-CH 200V 120MA E-LINE

ActiveE-Line-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs30Ohm @ 100mA, 5V
FET TypeN-Channel
Input Capacitance (Ciss) (Max) @ Vds85 pF @ 25 V
ManufacturerDiodes Incorporated
Mounting TypeThrough Hole
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V

Electrical

Drain-to-Source Voltage200 V
Drive Voltage (Max Rds On, Min Rds On)2.6V, 5V
Current - Continuous Drain (Id) @ 25°C120mA (Ta)
Max Power Dissipation500mW (Ta)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Supplier Device PackageE-Line (TO-92 compatible)

Environmental

GradeAutomotive
Operating Temperature-55°C ~ 150°C (TJ)
QualificationAEC-Q101