CMSP2011A6-HF

Comchip Technology

CMSP2011A6-HF

Datasheet

Analog & Power

MOSFET P-CH 20VDS 12VGS 11A DFNW

Active6-WDFN Exposed PadAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs24mOhm @ 7.2A, 4.5V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds1580 pF @ 6 V
ManufacturerComchip Technology
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±12V
Vgs(th) (Max) @ Id1V @ 250µA

Electrical

Drain-to-Source Voltage20 V
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C11A (Ta)
Max Power Dissipation750mW (Ta)

Mechanical

PackageTape & Reel (TR)
Package / Case6-WDFN Exposed Pad
Supplier Device PackageDFNWB2x2-6L-J

Environmental

Operating Temperature150°C(TJ)