CMS06N10V8-HF

Comchip Technology

CMS06N10V8-HF

Datasheet

Analog & Power

MOSFET N-CH 100V 6.8A 8DFN

Obsolete8-PowerWDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs105mOhm @ 6A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs26.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1535 pF @ 15 V
ManufacturerComchip Technology
Mounting TypeSurface Mount
Product StatusObsolete
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.5V @ 250µA

Electrical

Drain-to-Source Voltage100 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C6.8A (Tc)
Max Power Dissipation1.7W (Ta), 10.4W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / Case8-PowerWDFN
Supplier Device Package8-PDFN (SPR-PAK ) (3.3x3.3)

Environmental

Operating Temperature-55°C ~ 150°C (TJ)