CZDM1003N TR

Central Semiconductor Corp

CZDM1003N TR

Analog & Power

MOSFET N-CH 100V 3A SOT-223

ObsoleteTO-261-4, TO-261AAAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs150mOhm @ 2A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds975 pF @ 25 V
ManufacturerCentral Semiconductor Corp
Mounting TypeSurface Mount
Product StatusObsolete
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20V
Vgs(th) (Max) @ Id4V @ 250µA

Electrical

Drain-to-Source Voltage100 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C3A (Ta)
Max Power Dissipation2W (Ta)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / CaseTO-261-4, TO-261AA
Supplier Device PackageSOT-223

Environmental

Operating Temperature-55°C ~ 150°C (TJ)