CXDM6053N TR PBFREE

Central Semiconductor Corp

CXDM6053N TR PBFREE

Datasheet

Analog & Power

MOSFET N-CH 60V 5.3A SOT-89

ActiveTO-243AAAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs41mOhm @ 5.3A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs8.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds920 pF @ 30 V
ManufacturerCentral Semiconductor Corp
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20V
Vgs(th) (Max) @ Id3V @ 250µA

Electrical

Drain-to-Source Voltage60 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C5.3A (Ta)
Max Power Dissipation1.2W (Ta)

Mechanical

PackageTape & Reel (TR)
Package / CaseTO-243AA
Supplier Device PackageSOT-89

Environmental

Operating Temperature-55°C~150°C(TJ)