CXDM3069N TR PBFREE

Central Semiconductor Corp

CXDM3069N TR PBFREE

Datasheet

Analog & Power

MOSFET N-CH 30V 6.9A SOT-89

ObsoleteTO-243AAAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs30mOhm @ 7A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds580 pF @ 15 V
ManufacturerCentral Semiconductor Corp
Mounting TypeSurface Mount
Product StatusObsolete
TechnologyMOSFET (Metal Oxide)
Vgs (Max)12V
Vgs(th) (Max) @ Id1.4V @ 250µA

Electrical

Drain-to-Source Voltage30 V
Drive Voltage (Max Rds On, Min Rds On)2.5V, 10V
Current - Continuous Drain (Id) @ 25°C6.9A (Ta)
Max Power Dissipation1.2W (Ta)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / CaseTO-243AA
Supplier Device PackageSOT-89

Environmental

Operating Temperature-55°C ~ 150°C (TJ)