CTLM8110-M832D BK

Central Semiconductor Corp

CTLM8110-M832D BK

Analog & Power

TRANSISTOR

Obsolete8-TDFN Exposed PadAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs240mOhm @ 200mA, 1.8V
FET FeatureSchottky Diode (Isolated)
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs3.56 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds200 pF @ 16 V
ManufacturerCentral Semiconductor Corp
Mounting TypeSurface Mount
Product StatusObsolete
TechnologyMOSFET (Metal Oxide)
Vgs (Max)8V
Vgs(th) (Max) @ Id1V @ 250µA

Electrical

Drain-to-Source Voltage20 V
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C860mA (Ta)
Max Power Dissipation1.65W (Ta)

Mechanical

PackageBulk
Package / Case8-TDFN Exposed Pad
Supplier Device PackageTLM832D

Environmental

Operating Temperature-65°C~150°C(TJ)