CTLDM303N-M832DS TR

Central Semiconductor Corp

CTLDM303N-M832DS TR

Datasheet

Analog & Power

MOSFET 2N-CH 30V 3.6A TLM832DS

Obsolete8-TDFN Exposed PadAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs40mOhm @ 1.8A, 4.5V
Base Product NumberCTLDM303N
Configuration2 N-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs13nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds590pF @ 10V
ManufacturerCentral Semiconductor Corp
Mounting TypeSurface Mount
Product StatusObsolete
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1.2V @ 250µA

Electrical

Drain-to-Source Voltage30V
Current - Continuous Drain (Id) @ 25°C3.6A
Power - Max1.65W

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / Case8-TDFN Exposed Pad
Supplier Device PackageTLM832DS

Environmental

Operating Temperature-55°C ~ 150°C (TJ)