CSICD10-1200 TR13

Central Semiconductor Corp

CSICD10-1200 TR13

Datasheet

Analog & Power

DIODE SIL CARBIDE 1.2KV 10A DPAK

ObsoleteTO-252-3, DPak (2 Leads + Tab), SC-63Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Capacitance @ Vr, F500pF @ 1V, 1MHz
ManufacturerCentral Semiconductor Corp
Mounting TypeSurface Mount
Product StatusObsolete
Reverse Recovery Time (trr)0 ns
TechnologySiC (Silicon Carbide) Schottky

Electrical

Voltage - DC Reverse (Vr) (Max)1200 V
Voltage - Forward (Vf) (Max) @ If1.7 V @ 10 A
Current - Average Rectified (Io)10A
Current - Reverse Leakage @ Vr250 µA @ 1200 V
SpeedNo Recovery Time > 500mA (Io)

Mechanical

PackageTape & Reel (TR)
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device PackageDPAK

Environmental

Operating Temperature - Junction-55°C ~ 175°C