CP802-CWDM3011P-CT

Name: CP802-CWDM3011P-CT
Brand: Central Semiconductor Corp

Analog & Power

MOSFET P-CH 30V 11A DIE

ActiveDieAnalog & Power

Structured electrical, mechanical and environmental parameters from imported product attributes.

Rds On (Max) @ Id, Vgs	13mOhm @ 1A, 10V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	3100 pF @ 8 V
Manufacturer	Central Semiconductor Corp
Mounting Type	Surface Mount
Packaging	Tray
Part Status	Active
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	3V @ 250µA

Drain-to-Source Voltage	30 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C	11A (Ta)

Package / Case	Die
Supplier Device Package	Die

Operating Temperature	-55°C ~ 150°C (TJ)