CP406-CWDM3011N-CT

Central Semiconductor Corp

CP406-CWDM3011N-CT

Datasheet

Analog & Power

MOSFET N-CH 11A 30V BARE DIE

ActiveDieAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs13mOhm @ 1A, 10V
FET TypeN-Channel
ManufacturerCentral Semiconductor Corp
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3V @ 250µA

Electrical

Drain-to-Source Voltage30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C9.93A (Ta)
Max Power Dissipation1.15W (Ta)

Mechanical

PackageTray
Package / CaseDie
Supplier Device PackageDie

Environmental

Operating Temperature-55°C~150°C(TJ)