General
| Manufacturer | Central Semiconductor Corp |
|---|---|
| Mounting Type | Through Hole |
| Product Status | Obsolete |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 950mV @ 100mA, 1A |
Technical Specifications
Structured electrical, mechanical and environmental parameters from imported product attributes.
Electrical
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
|---|---|
| Current - Collector (Ic) (Max) | 1.2 A |
| Current - Collector Cutoff (Max) | 10µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 100mA, 1V |
| Power - Max | 800 mW |
| Frequency - Transition | 300MHz |
Mechanical
| Package | Box |
|---|---|
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Supplier Device Package | TO-39 |
Environmental
| Operating Temperature | -65°C ~ 200°C (TJ) |
|---|