1N5416 BK TIN/LEAD

Central Semiconductor Corp

1N5416 BK TIN/LEAD

Analog & Power

DIODE GEN PURP 100V 3A GPR-4AM

ObsoleteR-4, AxialAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Capacitance @ Vr, F175pF @ 12V, 1MHz
ManufacturerCentral Semiconductor Corp
Mounting TypeThrough Hole
Product StatusObsolete
Reverse Recovery Time (trr)150 ns
TechnologyStandard

Electrical

Voltage - DC Reverse (Vr) (Max)100 V
Voltage - Forward (Vf) (Max) @ If1.1 V @ 3 A
Current - Average Rectified (Io)3A
Current - Reverse Leakage @ Vr1 µA @ 100 V
SpeedFast Recovery =< 500ns, > 200mA (Io)

Mechanical

PackageBulk
Package / CaseR-4, Axial
Supplier Device PackageGPR-4AM

Environmental

Operating Temperature - Junction-65°C ~ 200°C