General
| Output Configuration | Phototransistor |
|---|---|
| Manufacturer | Broadcom Limited |
| Mounting Type | Through Hole |
| Product Status | Obsolete |
| Response Time | 15µs, 15µs |
| Sensing Distance | 0.106" (2.7mm) |
| Sensing Method | Through-Beam |
| Type | Unamplified |
Technical Specifications
Structured electrical, mechanical and environmental parameters from imported product attributes.
Electrical
| Voltage - Collector Emitter Breakdown (Max) | 30 V |
|---|---|
| Current - Collector (Ic) (Max) | 10 mA |
| Current - DC Forward (If) (Max) | 50 mA |
Mechanical
| Package | Bulk |
|---|---|
| Package / Case | 4-DIP Module |
Environmental
| Operating Temperature | -25°C~85°C |
|---|