BSDB10S65E6

Bourns Inc

BSDB10S65E6

Datasheet

Analog & Power

DIODE SCHOT SIC 650V 10A TO263

ActiveTO-263-3, D2PAK (2 Leads + Tab), TO-263ABAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Capacitance @ Vr, F500pF @ 1V, 1MHz
ManufacturerBourns Inc.
Mounting TypeSurface Mount
Product StatusActive
Reverse Recovery Time (trr)0 ns
TechnologySiC (Silicon Carbide) Schottky

Electrical

Voltage - DC Reverse (Vr) (Max)650 V
Voltage - Forward (Vf) (Max) @ If1.45 V @ 10 A
Current - Average Rectified (Io)10A
Current - Reverse Leakage @ Vr50 µA @ 650 V
SpeedNo Recovery Time > 500mA (Io)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device PackageTO-263

Environmental

Operating Temperature - Junction-55°C ~ 175°C