General
| Rds On (Max) @ Id, Vgs | 98mOhm @ 20A, 20V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 79 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1475 pF @ 1000 V |
| Manufacturer | ANBON SEMICONDUCTOR (INT'L) LIMITED |
| Mounting Type | Through Hole |
| Packaging | Tube |
| Part Status | Active |
| Technology | SiCFET (Silicon Carbide) |
| Vgs (Max) | +25V, -10V |
| Vgs(th) (Max) @ Id | 4V @ 5mA |