2N7002E

ANBON SEMICONDUCTOR (INT'L) LIMITED

2N7002E

Analog & Power

N-CHANNEL SMD MOSFET ESD PROTECT

ActiveTO-236-3, SC-59, SOT-23-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs5Ohm @ 300mA, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs2.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds18 pF @ 30 V
ManufacturerANBON SEMICONDUCTOR (INT'L) LIMITED
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.5V @ 250µA

Electrical

Drain-to-Source Voltage60 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C340mA (Ta)
Max Power Dissipation350mW (Ta)

Mechanical

PackageTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device PackageSOT-23

Environmental

Operating Temperature150°C(TJ)