AOWF190A60

Alpha & Omega Semiconductor Inc

AOWF190A60

Analog & Power

N

ActiveAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs190mOhm @ 7.6A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1935 pF @ 100 V
ManufacturerAlpha & Omega Semiconductor Inc.
Mounting TypeThrough Hole
Product StatusActive
SeriesaMOS5™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 250µA

Electrical

Drain-to-Source Voltage600 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C20A (Tc)
Max Power Dissipation27W (Tc)

Mechanical

PackageTape & Reel (TR)
Supplier Device PackageTO-262F

Environmental

Operating Temperature-55°C ~ 150°C (TJ)