Structured electrical, mechanical and environmental parameters from imported product attributes.
| Rds On (Max) @ Id, Vgs | 11.5mOhm @ 30A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 28 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1450 pF @ 15 V |
| Manufacturer | Alpha & Omega Semiconductor Inc. |
| Mounting Type | Through Hole |
| Product Status | Obsolete |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2.7V @ 250µA |
| Drain-to-Source Voltage | 33 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 9A (Ta), 60A (Tc) |
| Max Power Dissipation | 1.9W (Ta), 79W (Tc) |
| Package | Tube |
|---|---|
| Package / Case | TO-220-3 |
| Supplier Device Package | TO-220 |
| Operating Temperature | -55°C ~ 175°C (TJ) |
|---|