AOT412

Alpha & Omega Semiconductor Inc

AOT412

Analog & Power

MOSFET N-CH 100V 8.2A/60A TO220

DiscontinuedTO-220-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs15.8mOhm @ 20A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3220 pF @ 50 V
ManufacturerAlpha & Omega Semiconductor Inc.
Mounting TypeThrough Hole
Product StatusNot For New Designs
SeriesSDMOS™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±25V
Vgs(th) (Max) @ Id3.8V @ 250µA

Electrical

Drain-to-Source Voltage100 V
Drive Voltage (Max Rds On, Min Rds On)7V, 10V
Current - Continuous Drain (Id) @ 25°C8.2A (Ta), 60A (Tc)
Max Power Dissipation2.6W (Ta), 150W (Tc)

Mechanical

PackageTube
Package / CaseTO-220-3
Supplier Device PackageTO-220

Environmental

Operating Temperature-55°C ~ 175°C (TJ)