AONY36356

Alpha & Omega Semiconductor Inc

AONY36356

Analog & Power

MOSFET 2N-CH 30V 17.5A/32A 8DFN

Active8-PowerVDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs6.1mOhm @ 20A, 10V
Base Product NumberAONY363
Configuration2 N-Channel
FET FeatureStandard
Gate Charge (Qg) (Max) @ Vgs20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds920pF @ 15V
ManufacturerAlpha & Omega Semiconductor Inc.
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.1V @ 250µA

Electrical

Drain-to-Source Voltage30V
Current - Continuous Drain (Id) @ 25°C17.5A (Ta), 32A (Tc), 24A (Ta), 32A (Tc)
Power - Max2.9W (Ta), 22W (Tc), 3.4W (Ta), 33W (Tc)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / Case8-PowerVDFN
Supplier Device Package8-DFN (5x6)

Environmental

Operating Temperature-55°C ~ 150°C (TJ)