AONX38168

Alpha & Omega Semiconductor Inc

AONX38168

Analog & Power

MOSFET 2N-CH 25V 25A/62A 8DFN

Active8-VDFN Exposed PadAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs3.3mOhm @ 20A, 10V, 0.8mOhm @ 20A, 10V
Base Product NumberAONX381
Configuration2 N-Channel (Dual) Asymmetrical
Gate Charge (Qg) (Max) @ Vgs24nC @ 10V, 85nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds1150pF @ 12.5V, 4520pF @ 12.5V
ManufacturerAlpha & Omega Semiconductor Inc.
Mounting TypeSurface Mount
Product StatusActive
SeriesXSPairFET™
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1.9V @ 250µA, 1.8V @ 250µA

Electrical

Drain-to-Source Voltage25V
Current - Continuous Drain (Id) @ 25°C25A (Ta), 62A (Tc), 50A (Ta), 85A (Tc)
Power - Max3.1W (Ta), 20W (Tc), 3.2W (Ta), 69W (Tc)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / Case8-VDFN Exposed Pad
Supplier Device Package8-DFN (5x6)

Environmental

Operating Temperature-55°C ~ 150°C (TJ)