AONS1R6A70

Alpha & Omega Semiconductor Inc

AONS1R6A70

Analog & Power

MOSFET N-CH 700V 1.1A/4.6A 8DFN

Active8-PowerVDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs1.6Ohm @ 1A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds354 pF @ 100 V
ManufacturerAlpha & Omega Semiconductor Inc.
Mounting TypeSurface Mount
Product StatusActive
SeriesaMOS™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id3.5V @ 250µA

Electrical

Drain-to-Source Voltage700 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C1.1A (Ta), 4.6A (Tc)
Max Power Dissipation4.1W (Ta), 78W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / Case8-PowerVDFN
Supplier Device Package8-DFN-EP (5x6)

Environmental

Operating Temperature-55°C~150°C(TJ)