AON5810

Alpha & Omega Semiconductor Inc

AON5810

Analog & Power

MOSFET 2N-CH 20V 7.7A 6DFN

Obsolete6-WFDFN Exposed PadAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs18mOhm @ 7.7A, 4.5V
Base Product NumberAON581
Configuration2 N-Channel (Dual) Common Drain
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs13.1nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds1360pF @ 10V
ManufacturerAlpha & Omega Semiconductor Inc.
Mounting TypeSurface Mount
Product StatusObsolete
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1V @ 250µA

Electrical

Drain-to-Source Voltage20V
Current - Continuous Drain (Id) @ 25°C7.7A
Power - Max1.6W

Mechanical

PackageTape & Reel (TR)
Package / Case6-WFDFN Exposed Pad
Supplier Device Package6-DFN-EP (2x5)

Environmental

Operating Temperature-55°C ~ 150°C (TJ)