AOK065V120X2

Alpha & Omega Semiconductor Inc

AOK065V120X2

Analog & Power

SILICON CARBIDE MOSFET, ENHANCEM

ActiveTO-247-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs85mOhm @ 20A, 15V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs62.3 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds1716 pF @ 800 V
ManufacturerAlpha & Omega Semiconductor Inc.
Mounting TypeThrough Hole
Product StatusActive
TechnologySiC (Silicon Carbide Junction Transistor)
Vgs (Max)+18V, -8V
Vgs(th) (Max) @ Id3.5V @ 250µA

Electrical

Drain-to-Source Voltage1200 V
Drive Voltage (Max Rds On, Min Rds On)15V
Current - Continuous Drain (Id) @ 25°C40.3A (Tc)
Max Power Dissipation187.5W (Tj)

Mechanical

PackageTube
Package / CaseTO-247-3
Supplier Device PackageTO-247

Environmental

Operating Temperature-55°C ~ 175°C (TJ)