AOI4T60P

Alpha & Omega Semiconductor Inc

AOI4T60P

Analog & Power

MOSFET N-CH 600V 4A TO251

ObsoleteTO-251-3 Stub Leads, IPakAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs2.1Ohm @ 2A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds522 pF @ 100 V
ManufacturerAlpha & Omega Semiconductor Inc.
Mounting TypeThrough Hole
Product StatusObsolete
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id5V @ 250µA

Electrical

Drain-to-Source Voltage600 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C4A (Tc)
Max Power Dissipation83W (Tc)

Mechanical

PackageTube
Package / CaseTO-251-3 Stub Leads, IPak
Supplier Device PackageTO-251A

Environmental

Operating Temperature-50°C~150°C(TJ)