AOI2210

Alpha & Omega Semiconductor Inc

AOI2210

Analog & Power

MOSFET N-CH 200V 3A/18A TO251A

ObsoleteTO-251-3 Stub Leads, IPakAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs105mOhm @ 18A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2065 pF @ 100 V
ManufacturerAlpha & Omega Semiconductor Inc.
Mounting TypeThrough Hole
Product StatusObsolete
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.5V @ 250µA

Electrical

Drain-to-Source Voltage200 V
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Current - Continuous Drain (Id) @ 25°C3A (Ta), 18A (Tc)
Max Power Dissipation2.5W (Ta), 100W (Tc)

Mechanical

PackageTube
Package / CaseTO-251-3 Stub Leads, IPak
Supplier Device PackageTO-251A

Environmental

Operating Temperature-55°C ~ 175°C (TJ)